Study of n-type Gallium Nitride Ohmic contact with surface treatment and fabricated filed effect transistors
碩士 === 國立海洋大學 === 光電科學研究所 === 90 === In this thesis, the different concentrations of GaN samples were grown by metalorganic chemical vapor deposition (MOCVD) and investigated by hall measurements. After surface treatments by dry or wet etching, and cleaning by different acid solutions, ohmic contact...
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| Format: | Others |
| Language: | zh-TW |
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2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71329626561203457482 |