Growth of Bimodal Ge Quantum Dots on Si(100) and Its Applications
碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === The size distribution of self-assembled islands is critical to their application as quantum dots in novel devices. Strained islands formed in heteroepitaxy sometimes change shape during growth. Here we report a series of annealing experiments for Ge i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42852777013257868476 |