The Characteristics of Silicon-Germanium Alloy Quantum Dot Devices Prepared by Combination of Bottom-up and Top-down Technologies

碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === The thermal evaporation method was chosen to synthesize spherical SiGe nanoparticles, which is basically a bottom-up approach. By combining the subsequent top-down approach, i.e., molecular beam epitaxy, the SiGe alloy quantum dot infrared photodetec...

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Bibliographic Details
Main Authors: Lin, Tse-Chi, 林澤琦
Other Authors: Lee, Si-Chen
Format: Others
Language:en_US
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/22113241468677069023