The Initial and Two-Step Growth of MOCVD Copper Using (hfac)Cu(COD) as the Precursor
碩士 === 國立臺灣科技大學 === 化學工程系 === 90 === Copper films were directly deposited on TaN surface by MOCVD。A highly conductive and pure copper film can be deposited conformally、continuously、and nonporously at 190℃for 9 min。 Instead SEM,the porousity and continuity of copper films can be...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/09964445462519256275 |