The Initial and Two-Step Growth of MOCVD Copper Using (hfac)Cu(COD) as the Precursor

碩士 === 國立臺灣科技大學 === 化學工程系 === 90 === Copper films were directly deposited on TaN surface by MOCVD。A highly conductive and pure copper film can be deposited conformally、continuously、and nonporously at 190℃for 9 min。 Instead SEM,the porousity and continuity of copper films can be...

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Bibliographic Details
Main Authors: Wei-Chi Chou, 周偉吉
Other Authors: Chiapyng Lee
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/09964445462519256275