The Initial and Two-Step Growth of MOCVD Copper Using (hfac)Cu(COD) as the Precursor
碩士 === 國立臺灣科技大學 === 化學工程系 === 90 === Copper films were directly deposited on TaN surface by MOCVD。A highly conductive and pure copper film can be deposited conformally、continuously、and nonporously at 190℃for 9 min。 Instead SEM，the porousity and continuity of copper films can be...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09964445462519256275 |
| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 90 === Copper films were directly deposited on TaN surface by MOCVD。A highly conductive and pure copper film can be deposited conformally、continuously、and nonporously at 190℃for 9 min。
Instead SEM，the porousity and continuity of copper films can be determined by sheet resistance and reflectivity measurements，which provide noble methodologies for the end-point detection of seed layer deposition。
During the nucleation stage of copper films，the formation of more copper nuclei can produce copper films with smaller grains。Thus，we investigated the two-step growth methodology for the deposition of copper films：in the first step，the nucleation is done at 80℃ for 3 min then the temperature is raised to 190℃ and stayed there for 3 min；in the second step，the CVD is done at 190℃ for 3 min。
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