Optimal Design of Trench Gate Insulted Gate Bipolar Transistor

碩士 === 國立臺灣科技大學 === 電子工程系 === 90 === In recent years, the performance and fabrication of IGBT’s have been significantly improved and the application field of IGBT have widely been expending, especially in high power electronic device. It is reported that the Trench-Gate IGBT has superior...

Full description

Bibliographic Details
Main Authors: Shih-Hsiang Tai, 戴士翔
Other Authors: Miin-Horng Juang
Format: Others
Language:en_US
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/99755982922692722594