Optimal Design of Trench Gate Insulted Gate Bipolar Transistor
碩士 === 國立臺灣科技大學 === 電子工程系 === 90 === In recent years, the performance and fabrication of IGBT’s have been significantly improved and the application field of IGBT have widely been expending, especially in high power electronic device. It is reported that the Trench-Gate IGBT has superior...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99755982922692722594 |