The Studies of Process-Related Reliability Issue on Ultra-Thin Gate Oxide CMOS Devices

碩士 === 國立臺北科技大學 === 機電整合研究所 === 90 === In this thesis study, we propose a furnace N2O oxidation process to improve the reliability of ultra-thin gate oxide grown in rapid thermal oxidation (RTO). Base on Weibull slope β, we find, for the first time, degradation on the reliability of the t...

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Bibliographic Details
Main Authors: Yi-Feng Chen, 陳宜鋒
Other Authors: Heng-Sheng Huang
Format: Others
Language:en_US
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/56100845463098228787