The Studies of Process-Related Reliability Issue on Ultra-Thin Gate Oxide CMOS Devices
碩士 === 國立臺北科技大學 === 機電整合研究所 === 90 === In this thesis study, we propose a furnace N2O oxidation process to improve the reliability of ultra-thin gate oxide grown in rapid thermal oxidation (RTO). Base on Weibull slope β, we find, for the first time, degradation on the reliability of the t...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/56100845463098228787 |