| Summary: | 碩士 === 國立臺北科技大學 === 材料及資源工程系碩士班 === 90 === Nb2O5 and Y2O3 additions on TiO2 thin films were deposited on glass and N-type(100) silicon substrate by RF-magnetron sputtering. The properties of films were investigated as functions of sputtering pressure, and gas flow rate. Post-deposition annealing was performed at 400~600℃ in O2 for an hour. The results show that the films were crystallized when deposited on glass or silicon substrate with 40 sccm Ar and 8 sccm O2. However, Y2O3 doped TiO2 films on glass annealed at 600℃ were still amorphous. The roughness of the films increases with increasing the annealing temperature. After heat treatment, the Y2O3 doped thin films show no grain growth, but Nb2O5 doped thin films exhibit recrystallization. The transmittance of films doped with Y2O3 or Nb2O5 were higher than those of pure TiO2 thin films. After annealing, the curves of transmittance verse wavelength show no obvious change, however, the refractive index decreases after annealing. The dielectric constants of Y2O3 doped TiO2 films were lower than those of others. They increased after annealing. The leakage current densities of the Nb2O5 doped films annealed at 600℃ were lower than those of as deposited films.
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