Stress Analysis of Cu Chip Under Wire Bonding Process

碩士 === 國立中正大學 === 機械系 === 91 === In order to improve the IC performance, Cu chips which combined copper interconnects with Low-K dielectric material are the trend of future IC development. Due to the low mechanical properties of Low-K materials, the chips may fail during the wire bonding process. In...

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Bibliographic Details
Main Authors: Yi Tsung Tsai, 蔡貽宗
Other Authors: D. S. Liu
Format: Others
Language:zh-TW
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/89451780870661356439