The Discussion of AlN Thin Film Growth Mechanism by Helicon Sputtering Method
碩士 === 中原大學 === 電子工程研究所 === 91 === Abstract Aluminum Nitride(AlN) films are highly attractive due to their excellent piezoelectricity, high surface acoustic wave velocity, large energy gap and good temperature stability. It has been a good choice to develop AlN high frequency acoustic wave devices a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qxr8xf |