Characterizations of InGaAs epilayer on InP substrate grown by LPE
碩士 === 中原大學 === 電子工程研究所 === 91 === Rare-Earth (RE) treated III-V compound semiconductors have been of great interest recently. Many research had discovered that the RE elements have a strong affinity to oxygen and other group VI elements, and this effect can be used to perform effective gettering of...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/chysme |