Study on ohmic contact to n-GaAs with AuGeNi/Au
碩士 === 中原大學 === 電子工程研究所 === 91 === Abstract Gallium Arsenic（GaAs）device applications have become very critical due to the requirement for global communication industrial growth. In general, GaAs devices have the merit of the higher electric mobility speed than Si devices, As a result, the signal to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/n6u32s |