Characterizations of GaAs epilayer grown by LPE
碩士 === 中原大學 === 電子工程研究所 === 91 === In this thesis, details of the Liquid-Phase Epitaxy (LPE) and the experimental procedures were mentioned here. The high quality p-type, n-type, and slightly rare-earth element Ho-treated GaAs epitaxial layers on semi-insulating (100) oriented GaAs substrate by LPE...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ru5mte |