Deposition and Etching of Silicon Nitride Thin Films by High Density Plasma Chemical Vapor Deposition System

• Main Authors: Yu-Jen Chien, 簡鈺人
• Other Authors: Chien-Hsing Hsu
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/60354858961608028415

碩士 === 逢甲大學 === 化學工程學所 === 91 === Abstract An inductively coupled plasma chemical vapor deposition system was used to grow silicon nitride thin films. The thin films were divided into many layers by incorporating the plasma passivation in the deposition. The influences of deposition parameters, including ICP power、bias power、deposition pressure、deposition temperature、N2/SiH4 ratio、dilution gas and flow rate were studied. The effects of plasma treatment parameters, including plasma treatment time、treatment gas(N2) flow rate and treatment number were also investigated. FTIR、N&K analyzer、AFM、SIMS and stress meter were used to characterize the properties of the films, such as chemical bonding structure、thickness、refractive index、RMS roughness、hydrogen content and stress. An MIS structure Al/a-SiNx:H/P type Si wafer/Al was made for measuring the I-V curve. We have obtained a stable silicon nitride thin film with lower hydrogen content and smaller roughness of the surface comparing to those grown by normal method. This film was grown by dividing into many, about 30Å depositions and inserted the N2 plasma treatment to passivate the silicon nitride film, 10 seconds deposition immediately followed by 10 seconds plasma treatment for 20 cycles. The condition of deposition process for the this stable film was 900W ICP power、500W Bias power、20mTorr pressure、300℃ temperature、100/25 nitrogen-to-silane gas flow ratio、50sccm Ar and 50sccm He dilution gas flow rate, and the treatment gas, N2 flow rate was 200sccm.