Plasma-Treated Doubled-Layer Ta as Diffusion Barriers for Cu Metallization
碩士 === 逢甲大學 === 電機工程所 === 91 === In the development of ultra-large scale integration (ULSI)，Cu is expected to be adopted in deep submicron ULSI metallization due to its lower resistivity and better reliability than conventional Al alloys。But copper diffuses fast in Si and introduce deep-level traps，...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28251061846376649993 |