Investigation of MOS-BJT-NDR Devices and Applications Suitable for VLSI Design
碩士 === 崑山科技大學 === 電子工程研究所 === 91 === In this thesis we propose MOS-BJT-NDR circuits to fulfill the NDR characteristics of traditional resonant tunneling diodes. We also utilize the basic MOS-BJT-NDR cell to proceed with further study by simulation, analysis and design. In the beginning we present th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26d53r |