Characteristics of pseudomorphic high electron mobility transistor under different temperature
碩士 === 崑山科技大學 === 電機工程研究所 === 91 === In this thesis, we use the In0.52Al0.48As Barrier layer to confine the electron in the In0.535Ga0.465As channel layer. The electon mobility can be improved by using InGaAs channel. The electron mobility are 9600 cm2/v-s and 37400 cm2/v-s under 300K and 77K, respe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24rf3f |