The Study of Photoelectric Characteristics of High Brightness LEDs Passivated by (NH4)2Sx
碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 91 === In this study, the LED devices were passivated by (NH4 )2Sx, and we can see the leakage current reduced by 2 ~ 3 orders and the brightness of the chip increased to 12%. We used SPMs (Scanning probe microscopes) to observe the roughness on the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73500799028118394257 |