Electrical Characteristics of Si/SiGe/Si Tunneling Structure
碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 91 === An ultra-thin base Si/SiGe/Si heterojuction bipolar transistor (HBT) is theoretically investigated. In such a structure, many advantages of conventional HBT, such as high current gain and high emitter efficiency etc., are reserved, and a small recombina...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94477093982102166911 |