| Summary: | 碩士 === 國立中興大學 === 材料工程學研究所 === 91 === ABSTRACT
The poly-si films have been employed in fabrication of TFT-LCD to improve the electronic property of amorphous silicon. The large size grain boundaries and less lattice defects in poly-silicon films remarkably up grade the TFT characteristics, such as sub-threshold voltage, mobility and leakage current.
Now, various technologies are used to obtain poly-silicon thin films including the conspicuous method - laser induced crystallization of a-silicon. In this research, the poly-silicon films were obtained by similar laser annealing method using (Nd:YAG) laser. However, the initial silicon films were deposited by ion beam sputtered a-silicon technology. The structure of poly-silicon films were studied with various deposition conditions and annealing conditions. The high quality large grain poly-silicon films are obtained using the high voltage (800 V) ion beam to sputter silicon on the capped PECVD SiO2 layer and laser annealed with energy 225mj/cm, scanning speed of 0.6mm/sec.The properly control of the heat dissipation during the sputtering and annealing is the major technique to control the grain size in this research.
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