The study of laser induced amorphous silicon thin films crystallization
碩士 === 國立中興大學 === 材料工程學研究所 === 91 === ABSTRACT The poly-si films have been employed in fabrication of TFT-LCD to improve the electronic property of amorphous silicon. The large size grain boundaries and less lattice defects in poly-silicon films remarkably up grade the TFT characteristics...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2003
|
Online Access: | http://ndltd.ncl.edu.tw/handle/14374732068202588705 |
id |
ndltd-TW-091NCHU0159006 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-091NCHU01590062015-10-13T17:01:59Z http://ndltd.ncl.edu.tw/handle/14374732068202588705 The study of laser induced amorphous silicon thin films crystallization 非晶矽薄膜之雷射誘發結晶研究 Jan-Chang Chen 陳建璋 碩士 國立中興大學 材料工程學研究所 91 ABSTRACT The poly-si films have been employed in fabrication of TFT-LCD to improve the electronic property of amorphous silicon. The large size grain boundaries and less lattice defects in poly-silicon films remarkably up grade the TFT characteristics, such as sub-threshold voltage, mobility and leakage current. Now, various technologies are used to obtain poly-silicon thin films including the conspicuous method - laser induced crystallization of a-silicon. In this research, the poly-silicon films were obtained by similar laser annealing method using (Nd:YAG) laser. However, the initial silicon films were deposited by ion beam sputtered a-silicon technology. The structure of poly-silicon films were studied with various deposition conditions and annealing conditions. The high quality large grain poly-silicon films are obtained using the high voltage (800 V) ion beam to sputter silicon on the capped PECVD SiO2 layer and laser annealed with energy 225mj/cm, scanning speed of 0.6mm/sec.The properly control of the heat dissipation during the sputtering and annealing is the major technique to control the grain size in this research. Chung-Yuan Kung Fuh-Sheng Shieu 貢中元 薛富盛 2003 學位論文 ; thesis 79 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立中興大學 === 材料工程學研究所 === 91 === ABSTRACT
The poly-si films have been employed in fabrication of TFT-LCD to improve the electronic property of amorphous silicon. The large size grain boundaries and less lattice defects in poly-silicon films remarkably up grade the TFT characteristics, such as sub-threshold voltage, mobility and leakage current.
Now, various technologies are used to obtain poly-silicon thin films including the conspicuous method - laser induced crystallization of a-silicon. In this research, the poly-silicon films were obtained by similar laser annealing method using (Nd:YAG) laser. However, the initial silicon films were deposited by ion beam sputtered a-silicon technology. The structure of poly-silicon films were studied with various deposition conditions and annealing conditions. The high quality large grain poly-silicon films are obtained using the high voltage (800 V) ion beam to sputter silicon on the capped PECVD SiO2 layer and laser annealed with energy 225mj/cm, scanning speed of 0.6mm/sec.The properly control of the heat dissipation during the sputtering and annealing is the major technique to control the grain size in this research.
|
author2 |
Chung-Yuan Kung |
author_facet |
Chung-Yuan Kung Jan-Chang Chen 陳建璋 |
author |
Jan-Chang Chen 陳建璋 |
spellingShingle |
Jan-Chang Chen 陳建璋 The study of laser induced amorphous silicon thin films crystallization |
author_sort |
Jan-Chang Chen |
title |
The study of laser induced amorphous silicon thin films crystallization |
title_short |
The study of laser induced amorphous silicon thin films crystallization |
title_full |
The study of laser induced amorphous silicon thin films crystallization |
title_fullStr |
The study of laser induced amorphous silicon thin films crystallization |
title_full_unstemmed |
The study of laser induced amorphous silicon thin films crystallization |
title_sort |
study of laser induced amorphous silicon thin films crystallization |
publishDate |
2003 |
url |
http://ndltd.ncl.edu.tw/handle/14374732068202588705 |
work_keys_str_mv |
AT janchangchen thestudyoflaserinducedamorphoussiliconthinfilmscrystallization AT chénjiànzhāng thestudyoflaserinducedamorphoussiliconthinfilmscrystallization AT janchangchen fēijīngxìbáomózhīléishèyòufājiéjīngyánjiū AT chénjiànzhāng fēijīngxìbáomózhīléishèyòufājiéjīngyánjiū AT janchangchen studyoflaserinducedamorphoussiliconthinfilmscrystallization AT chénjiànzhāng studyoflaserinducedamorphoussiliconthinfilmscrystallization |
_version_ |
1717779387859861504 |