Characterization and Applications of ZrNx Thin Films Prepared by Dual Ion Beam Sputtering
碩士 === 國立中興大學 === 材料工程學研究所 === 91 === Copper replaces aluminum as an advanced ULSI interconnect material because of its low electric resistivity and better electromigration resistance. It is essential to have a high performance diffusion barrier to suppress diffusion between copper and silicon subst...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74731513560389445578 |