Characteristics of Ta-Si-N Thin Films and their Performances as Diffusion Barriers
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === Ta-N based diffusion barrier has been used widely in copper interconnection system in IC. However, Ta-N films are mostly polycrystalline and the grain boundaries will serve as expedient diffusion paths. To overcome this problem, amorphous thin films of Ta-S...
Main Authors: | Li-Wen Lai, 賴豊文 |
---|---|
Other Authors: | Jen-Sue Chen |
Format: | Others |
Language: | zh-TW |
Published: |
2003
|
Online Access: | http://ndltd.ncl.edu.tw/handle/03550684599367418483 |
Similar Items
-
Diffusion barrier characteristics of TaN thin film on cobalt cemented tungsten carbide
by: Bo-Lu Lin, et al.
Published: (2010) -
TaSiN and TaSi Diffusion Barriers in Cu Metallization
by: Shih Chan Huang, et al.
Published: (2000) -
Diffusion barrier characteristics of CrTaN thin film on cobalt cemented tungsten carbide
by: Yu-Ting Lin, et al.
Published: (2011) -
TaSiN and TaN Diffusion Barriers in Cu Metallization
by: Chang Ou Yang, et al.
Published: (1999) -
Materials and Diffusion Barrier Performance Analyses of TaNx Thin Films
by: Hung-chi Chiou, et al.
Published: (2009)