Characterization of TiO2-SiO2 composite oxide films as gate dielectrics
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === The material characterizations of various TiO2-SiO2 composite oxide thin films prepared with low pressure chemical vapor deposition, using titanium tetra-iso-propoxide(TTIP) and tetraethoxysilane(TEOS) as precursors, before and after annealing were investig...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24578557708418187908 |