Effects of excess Bi concentration,buffered Bi2O3 layers,and Ta doping on the ferroelectricity of Bi3.25La0.75Ti3O12 Films Grown by chemical solution deposition
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === Effects of excess Bi concentrations, buffered Bi2O3 layers, and Ta doping on the ferroelectricity of chemical-solution-deposited (CSD) Bi3.25La0.75Ti3O12 (BLT) films were studied as a function of annealing temperature in the range of 550-800℃. Meanwhile, So...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/15824081979087546347 |