Preparation of NiO thin films and investigation on electrical and optical property
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === Nickel oxide films may be good ohmic contact material for p-type GaN. As for the ohmic contact electrode of GaN, nickel oxide films need to be prepared for better materials in high transmittance and conductivity. By RF magnetron reactive sputtering, NiO t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90486904260752635509 |