Fabrication and Study of InGaAsP/InGaAs/InP Heterojunction Bipolar Transistors (HBTs)
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In this thesis, we present heterojunction bipolar transistors (HBTs) based on InP-based material system grown by a low-pressure-metal-organic chemical vapor deposition (LP-MOCVD) system. We focus on the improved designs of conventional device structures, the...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77563399888885420891 |