Investigation of High Power SBD with Lateral Super Junction edge Termination
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === Schottky barrier diodes (SBDs) with low forward voltage drop (VF), low reverse leakage current (IR), low power loss and high breakdown voltage (VBD), etc., have been urgently required in electronic industry. Essentially, VF and IR of SBDs are key factors in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38213598049648927959 |