Investigation of High Power SBD with Lateral Super Junction edge Termination

• Main Authors: Chih-Wei Chen, 陳治維
• Other Authors: Bor-Wen Liu
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/38213598049648927959

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === Schottky barrier diodes (SBDs) with low forward voltage drop (VF), low reverse leakage current (IR), low power loss and high breakdown voltage (VBD), etc., have been urgently required in electronic industry. Essentially, VF and IR of SBDs are key factors in determining the power loss of SBDs for power applications, which strongly depend on the Schottky barrier height (SBH). In general, a larger SBH would result in a lower IR but a larger VF, while a lower SBH shows an inverse situation. How to solve or release the trade-off problem between VF and IR, how to improve the breakdown voltage of SBDs to approach its theoretical value, and how to minimize the power loss of SBDs without sacrificing other device properties, are still open problems in the SBDs fabrication. In this thesis, a novel device design with a RESURF type lateral super-junction for edge termination, a novel polysilicon (poly-Si) guarding ring and related fabrication process including Boron ion implantation for IR reduction and VBD enhancement are presented to tackle the open problems mentioned above. Both theoretical and experimental studies including optimum device design and device fabrication process have been conducted in this study. Special emphasis for the theoretical study is focused on the design and simulation of edge termination with super-junction, poly-Si floating ring, guard ring, and field plate. Influence of device structural parameters used in the device geometry was investigated in detail. In this thesis, technology related to high breakdown voltage device design and fabrication process has been established. It is found that the device and fabrication technology developed in the present study could be successfully applicable to the realization of SBDs with VBD > 110V, IR < 10uA/cm2,VF < 0.5V @1A/cm2 and an adjustable SBH (0.778~0.796 V).