Tungsten-Rhenium alloy (ReW3) thin films as diffusion barriers for Cu metallization on Si/SiO2
碩士 === 國立交通大學 === 材料科學與工程系 === 91 === Copper has been used as the interconnect material in the fabrication of advanced ultra-large scale integration circuit devices due to its lower resistivity and better properties than conventional Al alloys. Since Cu diffuses fast in Si and forms deep-level trap...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84852563260182489978 |