Interface morphologies and electrical characteristic of bonded GaAs wafers
碩士 === 國立交通大學 === 材料科學與工程系 === 91 === In this study, direct wafer bonding technology was used to bond GaAs wafers .Before bonding, the organic solutions were only used to preserve native oxide layer. The annealing temperature, bonding type is our variables, the mechanical strength, elec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12513851294557854111 |