Ge Layer-resolved Distribution During Deposition on the Si(100) Surface Studied by Simulation
碩士 === 國立交通大學 === 物理研究所 === 91 === This thesis studied the growth process of Ge on the Si(100) surface and the Ge site correlation on the Ge/Si(100) surface by simulation. It is known that deposited Ge atoms randomly replace Si atoms on the Si(100) surface. Si atoms that are replaced dif...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56163186913218653607 |