Using ECR-plasma Processing Technology to Investigate the RIE-treated Surface and to Form the Gate Dielectric and Passivation Insulator for GaN Application
博士 === 國立交通大學 === 電子工程系 === 91 === GaN is a highly potential semiconductor material with the properties of wide bandgap (3.4 eV), high breakdown electric field, high carrier mobility and fair thermal conductivity. It is not only applied widely in the blue and green light emitting diodes (...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63972283195300467771 |