The Electrical Characteristics and the Application in Device of High k Dielectrics
博士 === 國立交通大學 === 電子工程系 === 91 === According to the continuous scaling of device, the thickness of gate oxide has to be reduced. However, the high leakage current degrades the performance of transistors and enlarges the power consumption of the devices. Therefore, the replacement of conventional the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47811562114312328042 |