Chemical Vapor Deposition o fTaN and Barrier Property of NiSi against Cu Diffusion
碩士 === 國立交通大學 === 電子工程系 === 91 === This thesis study consists of two parts. The first part is mainly the construction of a low pressure chemical-vapor-deposition (CVD) system for the deposition of TaN films to be used as copper diffusion barrier. The second part is the investigation of th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04839304548840741883 |