Retrograde Body of Power MOSFET
碩士 === 國立交通大學 === 電子工程系 === 91 === The channel length of traditional trench gate power MOSFET is confined to punch-through breakdown of source/drain, and it is decided by the depletion width when large drain voltage is applied. Besides, the peak base concentration in channel determines th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39281232676683778095 |