Study on deep sub-micron mosfets with ultra thin silicon nitride gate dielectric
碩士 === 國立交通大學 === 電子工程系 === 91 === In the thesis, we successfully fabricated mosfets with ultra thin silicon nitride gate dielectric, combined with fluorine silicon substrate ion implantation in order to comprehensively discuss the changes and improvements of device characteristics. To g...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/01823323884666624472 |