| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 91 === In the thesis, we successfully fabricated mosfets with ultra thin silicon nitride gate dielectric, combined with fluorine silicon substrate ion implantation in order to comprehensively discuss the changes and improvements of device characteristics. To get a oxygen-riched interface, we also applied 900oC, 30sec, N2O annealing on the ultra thin SiN gate dielectric mosfets to enhance the carrier mobility. In these two parts, obvious electrical characteristic improvements are proved through the fluorine ion implantation.
In the last section, we tried to incorporate 500Å selective epitaxy silicon germanium channels into the process of ultra thin SiN gate dielectric mosfets. Both pMOSFET and nMOSFET show fair DC characteristics and fairly low leakage current, which demonstrates the viability of single-layered selective epitaxy SiGe channel on high speed pMOSFET in the future.
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