Characterization, Modeling and Reliability of LDMOS Power Devices
碩士 === 國立交通大學 === 電子工程系 === 91 === High voltage integrated circuits are emerging in a wide variety of application nowadays. LDMOS (Lateral Double-Diffused MOSFET) is usually the driver component in these circuits, thanks to its planar structure. The lightly-doped drift region provides a l...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/59773497154026584056 |