The Study of Ni Silicide on N+/P Junction and Poly-SiGe Gate for Ion Implantation/Plasma Immersion
碩士 === 國立交通大學 === 電子工程系 === 91 === In this thesis, we have studied the material properties of nickel silicide and the application for devices. Thermal stability of nickel silicide is poor. Hence, we use Titanium and Zirconium capping layers to improve the thermal stability of nickel silic...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08522485078571011427 |