| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 91 === In this thesis, we have studied the material properties of nickel silicide and the application for devices. Thermal stability of nickel silicide is poor. Hence, we use Titanium and Zirconium capping layers to improve the thermal stability of nickel silicide. It had been reported that the sheet resistance of p+/n junctions could be improved with Zr-capped nickel silicide. In order to apply Zr-capping layer in CMOS process, we investigated the influence of nickel silicide with Zr-capping layer on n+/p junctions. The n+/p junctions were implanted by arsenic in this experiment. It is observed the Zr-capped nickel silicide exhibit slight improvement in junction leakage current. On the contrary, Ti-capped nickel silicide had been shown to be extremely effective in improving the electrical characteristics of phosphorous implanted n+/p junctions.
We also investigated the effects of nickel silicide on PH3 plasma immersed shallow junction. Then the optimum sheet resistance could be achieved for PH3 plasma immersion. Furthermore, it is observed the junction leakage current can be effectively reduced by using Zr-capped NiSi due to prohibited agglomeration in Zr capping.
Besides, we also studied Ni germano-silicide on poly-SiGe with N2+ implantation. The obtained results suggest that nitrogen implantation can enhance thermal stability of nickel germano-silicide. That is because the N2+ implanted could suppress the agglomeration of nickel silicide.
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