MOD Derived Strontium Bismuth Tantalate Films for NV-FRAM Applications

碩士 === 國立交通大學 === 電子工程系 === 91 === As portable electronic devices become more and more popular nowadays, there is a confirmed increase in the demand for nonvolatile memory (NVRAM). Among all current NVRAM, ferroelectric memory (FRAM) is the most promising candidate. In this thesis, we inv...

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Bibliographic Details
Main Authors: Lian, Chiu-Wang, 連秋旺
Other Authors: Tseng, Tseung-Yuen
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/73085270505008248655