MOD Derived Strontium Bismuth Tantalate Films for NV-FRAM Applications
碩士 === 國立交通大學 === 電子工程系 === 91 === As portable electronic devices become more and more popular nowadays, there is a confirmed increase in the demand for nonvolatile memory (NVRAM). Among all current NVRAM, ferroelectric memory (FRAM) is the most promising candidate. In this thesis, we inv...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2003
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Online Access: | http://ndltd.ncl.edu.tw/handle/73085270505008248655 |