Hafnium-based Gate Dielectrics with NH3 Post-treatment and Various Annealing Temperatures
碩士 === 國立交通大學 === 電子工程系 === 91 === Conventionally, silicon dioxide has been used as the gate dielectrics in ultra-large scale integrated (ULSI) fabrication. As the device features’ size is scaled down to quarter and beyond, the thickness of gate oxide also has to be made progressively thi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/99502536572255185853 |