Hafnium-based Gate Dielectrics with NH3 Post-treatment and Various Annealing Temperatures
碩士 === 國立交通大學 === 電子工程系 === 91 === Conventionally, silicon dioxide has been used as the gate dielectrics in ultra-large scale integrated (ULSI) fabrication. As the device features’ size is scaled down to quarter and beyond, the thickness of gate oxide also has to be made progressively thi...
Main Authors: | De-Ching Shie, 謝德慶 |
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Other Authors: | Tan-Fu Lei |
Format: | Others |
Language: | en_US |
Online Access: | http://ndltd.ncl.edu.tw/handle/99502536572255185853 |
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