RF MOSFET modeling and the improvement of hole mobility of the SiGe high-k PMOSFET
博士 === 國立交通大學 === 電子工程系 === 91 === Because CMOS has advantages of low-cost and highly integrity, it has potential to replace the III-V device in low-power front-end circuit. In the respect of circuit designer, the accurate model is important for circuit performance. In our universal model...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41414806584335581025 |