Process and optoelectronic GaN metal-semiconductor-metal photodetectors
碩士 === 國立交通大學 === 電子物理系 === 91 === Abstract Interdigitated ultraviolet metal-semiconductor-metal photodetectors were successfully fabricated on undoped-GaN wafers. We fabricated many kinds MSM photodetectors with finger width = 3, 4, 5, 8 μm, finger spacing width = 2, 3, 4, 5, 8 μm, and w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01619457208698310381 |