Growth and Characterizations of GaN-related Materials
博士 === 國立交通大學 === 電子物理系 === 91 === We have grown the hexagonal and cubic GaN by using our homemade atmospheric metalorganic vapor phase epitaxy system (AP-MOVPE). The characteristics of these samples were investigated by using X-ray measurements, Hall measurements, photoluminescence, and...
Main Authors: | Wen-Hsiung Lee, 李文雄 |
---|---|
Other Authors: | Wei-Kuo Chen |
Format: | Others |
Language: | en_US |
Published: |
2003
|
Online Access: | http://ndltd.ncl.edu.tw/handle/36252625542838899931 |
Similar Items
-
The materials growth and characterization of GaN epitaxial film
by: Lin, Chia-Feng, et al.
Published: (1996) -
Growth, Fabrication and Characterization of AlGaN/GaN Schottky Diodes and AlInN/GaN Field-Effect Transistors
by: Geng-Yen Lee, et al.
Published: (2015) -
The Electrical and Optoelectronic Characterizations of GaAs:As+ and GaN Materials
by: Jui-Lin Chang, et al.
Published: (2000) -
Growth and characterization of AlGaN/GaN heterostructures
by: Ming-Horng Gau, et al.
Published: (2004) -
Material Characterizations and DeviceApplications of Si-implanted p-GaN
by: Min-Lum Lee, et al.
Published: (2002)