Deep submicron doped-channel HFETs and its application on microwave power amplifier
博士 === 國立中央大學 === 電機工程研究所 === 91 === ABSTRACT Deep sub-micron doped-channel heterostructure field-effect transistors (DCFETs) with a high current density and superior microwave power performance was developed and characterized. Due to its excellent current driving capability, Schottky gate p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10383214772056123523 |